- working voltage : 24v - pb free version, rohs compliant, and halogn free - case: sod-323 small outline plastic package - terminal : matte tin plated, lead free, - cell phone handsets and accessories - keypads, side keys - portable instrumentation - microprocessor based equipment - peripherals p pp (note 2) w t j o c t stg o c v rwm (note 1) v v (br) v i r a c j pf document number: ds_s1405025 clamping voltage i pp = 5 a v c (note 2) 40 v - high temperature soldering guaranteed: 260c/10s - weight: 485 mg (approximately) symbol maximum ratings and electrical characteristics (t a =25 unless otherwise noted) v r = 24 v i pp = 17 a solderable per mil-std-202, method 208 guaranteed - mounting position : any parameter mechanical data version: e14 unit value 1 26.7 50 (typ.) parameter i r = 1 ma storage temperature range TESDC24V taiwan semiconductor small signal product bi-directional tvs diode array features unit sod-323 kv - notebooks, desktops, and servers reverse leakage current max symbol junction temperature 150 reverse stand-off voltage 24 min 15 8 -- -55 ~ 150 esd voltage machine model iec61000-4-2 esd voltage air model contact model v esd (note 1) peak pulse power reverse breakdown voltage - meet iec61000-4-2 (esd) 15kv (air), 8kv (contac t) - meet iec61000-4-4 (eft) rating. 40a (5/50ns) - protects one bi-directional i/o line note 1: other voltages available upon request note 2: non-repetitive currect pulse 8/20 s exponential decay waveform according to iec61000- 4-5 note 1: devide stressed with ten repetitive esd pul ses, per channel(i/o to gnd) application value 500 jesd22-a114-b esd voltage per human body model note 3: per channel(i/o to gnd unless otherwise spe cified) junction capacitance v r = 0 v , f = 1.0 mhz 52 3 3 4 5 6
(ta=25 unless otherwise noted) document number: ds_s1405025 version: e14 small signal product TESDC24V taiwan semiconductor ratings and characteristics curves 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 power rating (%) fig. 1 admissible power dissipation curve ambient temperature ( o c) 0 10 20 30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 percent of i pp time (us) fig. 2 pulse waveform td = ipp / 2 0 10 20 30 40 50 60 0 2 4 6 8 10 clamping voltage (v) peak pulse current (a) fig. 3 clamping voltage vs. peak pulse current waveform parameters: tr = 8 s , td = 20 s 0 10 20 30 40 50 0 1 2 3 4 5 normalized capacitance (pf) reverse voltage (v) fig. 4 typical junction capacitance f = 1.0 mhz 0.01 0.1 1 10 0.1 1.0 10.0 100.0 1000.0 peak pulse power ppp (kw) pulse duration (us) fig. 5 non-repetitive peak pulse powe vs. pulse time
part no. TESDC24V part no. TESDC24V TESDC24V document number: ds_s1405025 version: e14 manufacture code packing code green compound code description TESDC24V rrg rr g green compound manufacture code (note 1) green compound code package packing marking note 1: indicator of manufacturing site for manufacture special control, if empty means no special control re quirement TESDC24V rr g sod-323 3k / 7" reel 2h taiwan semiconductor small signal product ordering information packing code TESDC24V-e0 rrg e0 rr g green compound example preferred p/n
dimensions min max min max a 1.15 1.40 0.045 0.055 b 2.30 2.70 0.091 0.106 c 0.25 0.45 0.010 0.018 d 1.60 1.80 0.063 0.071 e 0.80 1.00 0.031 0.039 f 0.05 0.17 0.002 0.007 g h - 0.10 - 0.004 suggested pad layout a b c d application infromation circuit board layout recommendations document number: ds_s1405025 - use ground planes whenever possible good circuit board layout is critical for the suppressio n of esd induced transients - place the esd protection diode near the input termina ls or connectors to restrict transient coupling - minimize the path length between the esd protection diode and the protected line - minimize all conductive loops including power and g round loops - the esd transient return path to ground should be kept as short as possible - never run critical signals near board edges - designed to protect one data, i/o, or power supply li ne - designed to protect sensitive electronics from damage or latch-up due to esd - designed to replace multilayer varistors (mlvs) in portab le applications - features large cross-sectional area junctions for conduc ting high transient currents unit (inch) dim. version: e14 1.60 0.063 2.85 0.112 - offers superior electrical characteristics such as lower clamping voltage and no device degradation when comp ared to mlvs - the combination of small size and high esd surge ca pability makes them ideal for use in portable applica tions TESDC24V taiwan semiconductor typ. typ. unit (mm) 0.83 0.033 0.63 0.025 small signal product dim. unit (mm) unit (inch) 0.475 ref 0.19 ref b a e d c f g h
notice document number: ds_s1405025 TESDC24V taiwan semiconductor small signal product version: e14 specifications of the products displayed herein are su bject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implie d, to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for suc h products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc pro ducts including liability or warranties relating to fitness for a particular purpose, m erchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in m edical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for an y damages resulting from such improper use or sale.
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